| PART |
Description |
Maker |
| FDFME3N311ZT |
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ
Integrated N-Channel PowerTrench垄莽 MOSFET and Schottky Diode 30 V, 1.6 A, 299 m楼?
|
Fairchild Semiconductor
|
| 2N2326 |
SCR, V(DRM) = 200 V TO 299.9 V
|
New Jersey Semi-Conductor Products, Inc.
|
| HN29V25611AT-50H |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
| HN29V25611ANBSP HN29V25611A HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
| M5M29F25611VP |
MORE THAN 16,057 SECTORS (271,299,072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
MORE THAN 16 /057 SECTORS (271 /299 /072 BITS) CMOS 3.3V-ONLY SERIAL READ FLASH MEMORY
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 35153-0500 0351530500 |
7.00/7.60/11.60mm (.276/.299/.457) Pitch, 6.35mm (250) Tab Wire-to-Board HousingFemale, 5 Circuits
7.00/7.60/11.60mm (.276/.299/.457") Pitch, 6.35mm (250") Tab Wire-to-Board HousingFemale, 5 Circuits
|
Molex Electronics Ltd.
|
| 0458301223 45830-1223 |
1.20mm (.047) by 2.00mm (.079) Pitch HD Mezz Plug, 299 Circuits, 18.00mm (.708) Unmated
|
Molex Electronics Ltd.
|
| MTB4N80E_D ON2428 ON2426 MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
